| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,770 pcs
|
1770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGWA30H65DFB2 is a discrete IGBT transistor belonging to the Transistors - IGBTs - Single category. It features a Trench Field Stop IGBT type and is rated for a high operating voltage of 650V and a continuous current of 50A. The device can dissipate up to 167W of power.
Key electrical characteristics include a Vce(on) maximum of 2.1V at 15V and 30A, a typical switching energy of 270µJ (on) and 310µJ (off), and a gate charge of 90 nC. The turn-on delay time (Td(on)) is specified as 18.4ns/71ns, with a reverse recovery time (trr) of 115 ns.
This IGBT is housed in a TO-247-3 package with long leads, designed for through-hole mounting. It operates within a temperature range of -55°C to 175°C (TJ). The component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
50A.
TO-247-3 through-hole package; supplier device package is TO-247 Long Leads.
-55°C to 175°C junction temperature.
Trench Field Stop.
2.1V at 15V gate and 30A collector current.
90nC.