STGWA25M120DF3 The STMicroelectronics STGWA25M120DF3 is a Trench Field Stop Insulated Gate Bipolar Transistor. It features a 1200V collector-emitter voltage and 50A continuous collector current.
Mfr Part #:

STGWA25M120DF3

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGWA25M120DF3 is a Trench Field Stop Insulated Gate Bipolar Transistor. It features a 1200V collector-emitter voltage and 50A continuous collector current.
Total Stock: 1,200 pcs
$ Price Range: $4.16

STGWA25M120DF3 Available from 1 distributor

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1,200 pcs
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STGWA25M120DF3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Switching Energy (On)
Td (on
Test Condition
Turn-ON delay
Vce(on) (Max) @ Vge, Ic
Voltage

STGWA25M120DF3 Description

Short technical summary and product information.

The STMicroelectronics STGWA25M120DF3 is a high-power Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It operates with a maximum collector-emitter voltage of 1200V and can handle a continuous collector current of 50A, with a maximum power dissipation of 375W.

 

This IGBT features a Trench Field Stop architecture, contributing to its efficient switching characteristics. It has a typical on-state voltage drop of 2.3V at 15V gate-emitter voltage and 25A collector current. The switching energy is rated at 850µJ for turn-on and 1.3mJ for turn-off, with turn-on delay of 28ns and turn-off delay of 150ns at 25°C. The gate charge is 85nC.

 

Packaged in a TO-247-3 with long leads, the STGWA25M120DF3 is designed for through-hole mounting. It operates across a wide temperature range from -55°C to 175°C (junction temperature), making it suitable for various industrial environments. Its robust design and specifications make it ideal for high-power switching applications.

STGWA25M120DF3 Quick Information

Product Type: IGBT Transistor
Canonical Name: STMicroelectronics STGWA25M120DF3 Trench Field Stop IGBT
Subcategory: IGBT

STGWA25M120DF3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGWA25M120DF3 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGWA25M120DF3 Features

  • 1200V collector-emitter breakdown voltage.
  • 50A continuous collector current capability.
  • 375W maximum power dissipation.
  • Trench Field Stop IGBT technology.
  • TO-247 package for through-hole mounting.

STGWA25M120DF3 Applications

  • Suitable for high power switching.
  • Used in industrial motor drives.
  • Applicable for UPS systems.
  • Ideal for welding equipment.
  • Designed for solar inverters.

STGWA25M120DF3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the STGWA25M120DF3?

The maximum collector-emitter voltage is 1200V.

What is the continuous collector current rating?

The continuous collector current rating is 50A.

What is the maximum power dissipation?

The maximum power dissipation is 375W.

What is the on-state voltage drop?

The typical on-state voltage drop is 2.3V at 15V gate-emitter voltage and 25A collector current.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (junction).

What type of package is used?

The package is a TO-247-3 with long leads.

How is the STGWA25M120DF3 mounted?

It is mounted using the through-hole method.

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