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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Supplier Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGWA20HP65FB2 is a single IGBT transistor featuring Trench Gate Field Stop technology. It offers a high voltage rating of 650V and a continuous current capability of 40A, with a power dissipation of 147W. The device is specified for operation within a temperature range of -55°C to 175°C (TJ).
This IGBT is packaged in a TO-247-3 case with long leads, suitable for through-hole mounting. Key electrical characteristics include a Vce(on) of 2.1V at 15V/20A and a switching energy of 214µJ (off). It also features a Td(on) of 78.8ns and a reverse recovery time (trr) of 140ns. The input type is standard, and the gate charge is 56 nC.
This component is suitable for various power switching applications where high voltage and current handling are required. Its robust construction and specified operating temperature range make it a reliable choice for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-247-3 (through hole).
-55°C to 175°C (junction temperature).
40A.
56 nC.
Trench Field Stop.