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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,650 pcs
|
1650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STGWA20H65DFB2 is a 650V, 40A Trench Field Stop IGBT manufactured by STMicroelectronics. It utilizes advanced Trench Field Stop technology to achieve low conduction and switching losses, making it suitable for high-efficiency power conversion applications.
This IGBT features a low collector-emitter saturation voltage (Vce(on)) of 2.1V typical at a gate-emitter voltage of 15V and a collector current of 20A, which reduces power dissipation. The total gate charge is 56nC, enabling fast switching transitions and reducing driver requirements. The device is rated for a continuous collector current of 40A and a power dissipation of 147W.
Typical applications include motor drives, uninterruptible power supplies, and renewable energy inverters where high voltage and current handling capability are required. The IGBT offers robust performance with a wide safe operating area.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
40A.
147W.
2.1V at a gate-emitter voltage of 15V and collector current of 20A.
56nC.
Trench Field Stop technology.