| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,970 pcs
|
2970 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGWA15H120DF2 is a single IGBT transistor designed for high-power applications. It features a Trench Field Stop IGBT type and a maximum voltage rating of 1200V.
This component offers a current rating of 30A and a power dissipation of 259W. Key electrical characteristics include a Vce(on) maximum of 2.6V at 15V and 15A, with switching energies of 380µJ (on) and 370µJ (off). The gate charge is 67nC, and the reverse recovery time is 231ns.
Operating within a temperature range of -55°C to 175°C (TJ), the STGWA15H120DF2 is suitable for demanding thermal environments. It is mounted via a through-hole method and comes in a TO-247-3 package, providing robust physical integration.
Compliance information indicates RoHS3 compliance and an MSL of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
TO-247-3 (through-hole).
-55°C to 175°C.
30A.
2.6V at Vge=15V and Ic=15A.
67nC at 600V, 15A test condition.
259W.