STGW80H65DFB The STMicroelectronics STGW80H65DFB is a Trench Field Stop IGBT transistor designed for high-power applications. It offers a 650V voltage rating and 120A current capability.
Mfr Part #:

STGW80H65DFB

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGW80H65DFB is a Trench Field Stop IGBT transistor designed for high-power applications. It offers a 650V voltage rating and 120A current capability.
✓ Total Stock: 17,194 pcs
$ Price Range: $4.16

STGW80H65DFB Available from 3 distributors

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STGW80H65DFB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Gate Charge
IGBT Type
Industrial Grade
Input Type
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
SVHC Present
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

STGW80H65DFB Description

Short technical summary and product information.

The STMicroelectronics STGW80H65DFB is a single IGBT transistor belonging to the Trench Field Stop family. It is rated for a maximum collector-emitter voltage (Vce) of 650V and can handle a continuous collector current (Ic) of up to 120A. The device dissipates a maximum power of 469W.

 

This IGBT features a through-hole mounting type and comes in a TO-247-3 package. It operates within a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a Vce(on) of 2V at 15V Vge and 80A Ic, with switching energy values of 2.1mJ (on) and 1.5mJ (off). The switching time (Td(on)) is 84ns and Td(off) is 280ns, with a reverse recovery time (trr) of 85 ns. The gate charge is 414 nC.

 

The STGW80H65DFB is suitable for various power switching applications where high voltage and current handling are required. Its robust construction and operating temperature range make it a reliable component for demanding environments.

STGW80H65DFB Quick Information

Product Type: IGBT Transistor
Canonical Name: STGW80H65DFB IGBT
Subcategory: Single

STGW80H65DFB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGW80H65DFB Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGW80H65DFB Features

  • 650V collector-emitter voltage rating.
  • 120A continuous collector current.
  • 469W maximum power dissipation.
  • TO-247-3 through-hole package.
  • Wide -55°C to 175°C operating temperature.

STGW80H65DFB Applications

  • Suitable for high-voltage power switching.
  • Used in industrial power supplies.
  • Applicable for motor control circuits.
  • Ideal for energy conversion systems.

STGW80H65DFB FAQs

5 frequently asked questions generated from this part’s specifications.
What is the voltage rating of the STGW80H65DFB IGBT?

The STGW80H65DFB has a voltage rating of 650V.

What is the maximum continuous current for the STGW80H65DFB?

The maximum continuous current for the STGW80H65DFB is 120A.

What is the package type for the STGW80H65DFB?

The STGW80H65DFB comes in a TO-247-3 package.

How is the STGW80H65DFB mounted?

The STGW80H65DFB is mounted using the through-hole method.

What is the operating temperature range of the STGW80H65DFB?

The operating temperature range for the STGW80H65DFB is -55°C to 175°C (TJ).

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