| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STGW75M65DF2 is a high-performance Single IGBT designed for demanding applications. It operates at a voltage of 650V and can handle currents up to 120A, with a power dissipation of 468W.
This IGBT utilizes Trench Field Stop technology for enhanced efficiency and performance. Key electrical characteristics include a Vce(on) of 2.1V at 15V/75A, a gate charge of 225 nC, and switching energies of 690µJ (on) and 2.54mJ (off). The operating temperature range is -55°C to 175°C (TJ).
Designed for through-hole mounting, the STGW75M65DF2 comes in a TO-247-3 package, making it suitable for various power electronic circuits. Its robust construction and specifications make it a reliable choice for power conversion and control systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 650V.
It is available in a TO-247-3 through-hole package.
The junction temperature range is -55°C to 175°C.
The continuous collector current rating is 120A.
The gate charge is 225 nC.
The maximum Vce(on) is 2.1V at 15V gate voltage and 75A collector current.
Turn-on energy is 690 µJ and turn-off energy is 2.54 mJ under test conditions of 400V, 75A, 3.3Ω, 15V.