| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,600 pcs
|
18600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGW75H65DFB2-4 is a single IGBT transistor featuring Trench Gate Field Stop technology. It is rated for a maximum voltage of 650V and can handle a continuous current of 115A, with a power dissipation of 357W. The device operates within a temperature range of -55°C to 175°C (TJ).
This IGBT is packaged in a TO-247-4 configuration and is designed for through-hole mounting. Key electrical characteristics include a Vce(on) of 2V at 15V and 75A, a gate charge of 207 nC, and switching energies of 992µJ (on) and 766µJ (off). The reverse recovery time is specified at 88 ns.
With its robust specifications, the STGW75H65DFB2-4 is suitable for various industrial power applications requiring reliable high-voltage switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The voltage rating is 650 V.
The continuous current capability is 115 A.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-247-4 package.
It is designed for through-hole mounting.
The RoHS status is RoHS3 Compliant.