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STGW60H65DF The STMicroelectronics STGW60H65DF is a Trench Field Stop IGBT transistor designed for high-power applications. It offers a 650V voltage rating and 120A current capability.
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STGW60H65DF

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGW60H65DF is a Trench Field Stop IGBT transistor designed for high-power applications. It offers a 650V voltage rating and 120A current capability.
✓ Total Stock: 2,016 pcs
$ Price Range: $4.16

STGW60H65DF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,016 pcs
On Request
2016 pcs On Request 1 On Request On Request 24+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STGW60H65DF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGW60H65DF Description

Short technical summary and product information.

The STMicroelectronics STGW60H65DF is a single IGBT transistor featuring Trench Field Stop technology. It is rated for a maximum voltage of 650V and can handle a continuous current of 120A, with a power dissipation of 360W. The device operates within a temperature range of -55°C to 150°C (TJ).

 

Key electrical characteristics include a Vce(on) of 1.9V at 15V and 60A, a gate charge of 206 nC, and a reverse recovery time (trr) of 62 ns. The switching energy is specified at 1.5mJ (on) and 1.1mJ (off). The input type is standard.

 

This IGBT is supplied in a TO-247-3 package and is designed for through-hole mounting. Its robust specifications make it suitable for various power electronics applications requiring high voltage and current handling capabilities.

STGW60H65DF Quick Information

Product Type: IGBT Transistor
Canonical Name: STMicroelectronics STGW60H65DF IGBT
Subcategory: Single

STGW60H65DF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGW60H65DF Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGW60H65DF Features

  • Trench Field Stop IGBT technology.
  • 650V voltage rating.
  • 120A continuous current capability.
  • 360W power dissipation.
  • TO-247-3 through-hole package.

STGW60H65DF Applications

  • Suitable for high-power switching.
  • Used in power conversion circuits.
  • Ideal for industrial applications.
  • Designed for robust performance.

STGW60H65DF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum voltage rating for the STGW60H65DF?

The STGW60H65DF has a maximum voltage rating of 650V.

What is the continuous current capability of the STGW60H65DF?

The STGW60H65DF can handle a continuous current of 120A.

What is the power dissipation of the STGW60H65DF?

The power dissipation for the STGW60H65DF is 360W.

What is the operating temperature range for this IGBT?

The operating temperature range for the STGW60H65DF is -55°C to 150°C (TJ).

What package type is the STGW60H65DF supplied in?

The STGW60H65DF is supplied in a TO-247-3 package.

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