| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,300 pcs
|
3300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGW40M120DF3 is a single IGBT transistor designed for power applications. It features a Trench Field Stop IGBT type, offering robust performance.
Key electrical characteristics include a high voltage rating of 1200V and a substantial current carrying capacity of 80A. The collector-emitter saturation voltage is specified at a maximum of 2.3V at 15V gate voltage and 40A current. Switching characteristics include a turn-on delay time of 35ns/140ns and a reverse recovery time of 355 ns. The switching energy is 1.5mJ on and 2.25mJ off, with a gate charge of 125 nC.
This device operates within a temperature range of -55°C to 175°C (TJ). It has a power dissipation rating of 468W. The input type is standard.
The STGW40M120DF3 is packaged in a TO-247-3 case and utilizes through-hole mounting. It is RoHS3 compliant, has an MSL of 1 (Unlimited), and is REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
80 A.
TO-247-3.
-55°C to 175°C.
2.3 V typical at 15 V gate voltage and 40 A collector current.
1.5 mJ (turn-on) and 2.25 mJ (turn-off) under test conditions of 600 V, 40 A, 10 Ohm, 15 V.
125 nC.