| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGW40H60DLFB is a single IGBT transistor designed for power applications. It features a 600V collector-emitter voltage and a continuous collector current of 80A, with a power dissipation of 283W.
This IGBT is built on Trench Field Stop technology, offering efficient switching characteristics. Key electrical parameters include a Vce(on) of 2V at 15V and 40A, and a switching energy of 363µJ (off). The operating temperature range is from -55°C to 175°C (TJ).
Packaged in a standard TO-247-3 configuration, it is designed for through-hole mounting. The component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STGW40H60DLFB has a voltage rating of 600V.
The continuous current for the STGW40H60DLFB is 80A.
The power dissipation of the STGW40H60DLFB is 283W.
The operating temperature range is -55°C to 175°C (TJ).
The STGW40H60DLFB is mounted using the through-hole method.
The package type is TO-247-3.