| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,900 pcs
|
3900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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| Vce(on) (Max) @ Vge, Ic | |
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The STMicroelectronics STGW30NC60WD is an ultra-fast IGBT transistor with a 600V collector-emitter voltage and a continuous collector current rating of 60A at 25°C. This device utilizes the advanced Power MESH™ process, offering an excellent balance between switching performance and low on-state characteristics.
Key electrical specifications include a maximum power dissipation of 200W and a collector-emitter saturation voltage of 2.5V at 15V VGE and 20A IC. The operating temperature range is -55°C to 150°C.
Designed for high-frequency operation, the STGW30NC60WD is suitable for applications such as high-frequency motor controls, inverters, and UPS systems. It also finds use in HF, SMPS, and PFC circuits in both hard switch and resonant topologies. The device is housed in a TO-247-3 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600 V.
The continuous collector current rating at 25°C is 60 A.
The power dissipation is 200 W.
The operating temperature range is -55°C to 150°C.
The STGW30NC60WD is supplied in a TO-247-3 package.
The collector-emitter saturation voltage is 2.5 V at 15V VGE and 20A IC.
The typical gate threshold voltage is 3.75 V.