| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,560 pcs
|
1560 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGW30M65DF2 is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It offers a high breakdown voltage of 650V and a continuous collector current rating of 60A, with a maximum power dissipation of 258W.
Key electrical characteristics include a low Vce(on) of 2V at 15V gate-emitter voltage and 30A collector current, along with specific switching energy values of 300µJ (on) and 960µJ (off). The device also features a typical turn-on delay (Td(on)) of 31.6ns and a reverse recovery time (trr) of 140ns.
This IGBT is packaged in a TO-247-3 through-hole configuration, making it suitable for various power electronics designs. The operating temperature range is from -55°C to 175°C (TJ), ensuring reliability in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 650 V.
The continuous collector current is 60 A.
The maximum power dissipation is 258 W.
The part is supplied in a TO-247-3 package and is designed for Through Hole mounting.
The operating temperature range is -55°C to 175°C (TJ).
The typical switching energy is 300µJ when turning on and 960µJ when turning off.