| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,180 pcs
|
3180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STGW30H65FB is a single IGBT from STMicroelectronics, utilizing Trench Field Stop technology for low conduction and switching losses. It is rated for a maximum collector-emitter voltage of 650V and a continuous collector current of 30A. The device can dissipate up to 260W of power, making it suitable for medium-power switching applications.
Key electrical characteristics include a typical Vce(on) of 2V at 15V gate drive and 30A collector current, and typical switching energies of 151µJ (turn-on) and 293µJ (turn-off) under test conditions of 400V, 30A, 10Ω gate resistance, and 15V gate drive. The gate charge is 149nC typical. The device features a standard gate input type.
The STGW30H65FB is packaged in a TO-247-3 through-hole package, with a supplier device package of TO-247. It operates over a junction temperature range of -55°C to 175°C. This IGBT is designed for applications such as motor drives, power supplies, and inverters where high efficiency and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
30A.
260W.
2V at 15V gate drive and 30A collector current.
Turn-on: 151µJ, turn-off: 293µJ, tested at 400V, 30A, 10Ω gate resistance, 15V gate drive.
-55°C to 175°C.
TO-247-3 (through-hole).