| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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124,820 pcs
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124820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
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| Mounting Type | |
| Operating Temperature | |
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| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGW25H120F2 is a Trench Field Stop IGBT transistor designed for high-power applications. It offers a robust 1200V voltage rating and a significant 50A current capability, with a power dissipation of 375W.
Key electrical characteristics include a low Vce(on) of 2.6V at 15V/25A, and switching energies of 600µJ (on) and 700µJ (off). The gate charge is rated at 100nC. The device operates within a temperature range of -55°C to 175°C (TJ).
This IGBT is packaged in a TO-247-3 configuration and features through-hole mounting. Its standard input type makes it suitable for various power switching circuits.
Environmental compliance includes RoHS3 compliance and an MSL 1 rating. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 1200V.
It is available in a TO-247-3 through-hole package.
The junction temperature range is -55°C to 175°C.
The maximum Vce(on) is 2.6V at Vge=15V and Ic=25A.
Turn-on energy is 600µJ and turn-off energy is 700µJ under test conditions of 600V, 25A, 10Ω, 15V.
The gate charge is 100nC.
It uses Trench Field Stop technology.