| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGW15M120DF3 is a high-performance IGBT designed for demanding applications. It features a Trench Field Stop architecture, providing excellent electrical characteristics.
Key electrical specifications include a 1200V collector-emitter breakdown voltage and a continuous collector current of 30A. The device can handle pulsed collector currents up to 60A. Its collector-emitter saturation voltage (Vce(on)) is a maximum of 2.3V at 15V gate-emitter voltage and 15A collector current. The maximum power dissipation is rated at 259W.
This IGBT also offers specific switching characteristics, with a switching energy of 550µJ (on) and 850µJ (off). The gate charge is 226 nC, and typical turn-on and turn-off times are 26ns and 122ns, respectively, under test conditions of 600V, 15A, 22 Ohm, and 15V. The reverse recovery time (trr) is 270 ns.
Mechanically, the STGW15M120DF3 is packaged in a TO-247-3 case and features a through-hole mounting type. It operates across a wide temperature range from -55°C to 175°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V collector-emitter breakdown.
TO-247-3 (through-hole).
-55°C to 175°C (junction).
30A continuous, 60A pulsed.
226 nC.
550µJ turn-on, 850µJ turn-off.
270 ns.