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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGP5H60DF is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It offers a high voltage rating of 600V and a continuous collector current of 10A, with a power dissipation of 88W. The IGBT type is Trench Field Stop, ensuring efficient switching characteristics.
Key electrical parameters include a Vce(on) of 1.95V at 15V gate voltage and 5A collector current, a gate charge of 43 nC, and switching energies of 56µJ (on) and 78.5µJ (off). The turn-on delay time is specified at 30ns/140ns, with a reverse recovery time (trr) of 134.5 ns.
This component operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-220-3 package and utilizes a through-hole mounting type, making it suitable for various industrial and power electronics designs. The input type is standard.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 (supplier device package TO-220).
-55°C to 175°C (junction temperature).
Maximum 1.95V at Vge=15V, Ic=5A.
43nC.
56µJ (on) and 78.5µJ (off).
134.5ns.