| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Industrial Grade | |
| Input Type | |
| Medical Grade | |
| Military Grade | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGP4M65DF2 is a Trench Gate IGBT M Series transistor. It is designed for applications requiring high voltage and current handling capabilities, featuring a 650V collector-emitter voltage and a continuous collector current of 8A at 25°C.
This IGBT transistor offers a low switching energy with typical values of 40µJ (on) and 136µJ (off), and a typical collector-emitter saturation voltage of 1.6V. The operating temperature range is from -55°C to +175°C, making it suitable for demanding environments. The device is packaged in a TO-220-3 through-hole configuration.
Key electrical characteristics include a maximum gate-emitter voltage of ±20V and a gate charge of 15.2 nC. The typical reverse recovery time is 133 ns. The power dissipation is rated at 68W.
This component is suitable for various power switching applications where efficiency and reliability are critical. Its robust design and specifications make it a versatile choice for engineers designing power supplies, motor drives, and other power electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650 V.
The package is TO-220-3, with through-hole mounting.
The operating junction temperature range is -55°C to +175°C.
The maximum continuous collector current is 8 A at 25°C.
The typical collector-emitter saturation voltage is 1.6 V; the maximum is 2.1 V at 15V gate drive and 4A collector current.
The typical switching energy is 40 µJ (turn-on) and 136 µJ (turn-off) tested at 400V, 4A, 47Ω, and 15V gate drive.
The typical gate charge is 15.2 nC.