| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,850 pcs
|
14850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGP30M65DF2 is a single IGBT transistor designed for high-power applications. It features a Trench Field Stop IGBT type, offering a robust performance with a voltage rating of 650V and a continuous current capability of 60A.
Key electrical characteristics include a maximum Vce(on) of 2V at 30A, switching energy values of 300µJ (on) and 960µJ (off), and a gate charge of 80 nC. The device operates within a temperature range of -55°C to 175°C (TJ).
Packaged in a standard TO-220-3 configuration, this through-hole mounted component is suitable for various power switching applications. Its specifications make it a reliable choice for designs requiring efficient power handling and thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220-3.
-55°C to 175°C (junction).
60A.
258W.
80nC.
300µJ (on) and 960µJ (off).