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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,600 pcs
|
5600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STGP20M65DF2 is a single N-channel IGBT from STMicroelectronics, utilizing Trench Field Stop technology for efficient power switching. It is rated for a maximum collector-emitter voltage of 650V and continuous collector current of 40A, with a power dissipation of 166W.
The device features a low collector-emitter saturation voltage (Vce(on)) of 2V at a gate-emitter voltage of 15V and collector current of 20A. Switching losses are characterized by turn-on energy of 140µJ and turn-off energy of 560µJ under test conditions of 400V, 20A, 12 Ohm gate resistance, and 15V gate drive. The total gate charge is 63nC, enabling fast switching.
The IGBT is housed in a through-hole TO-220 package, with a supplier device package of TO-220. It operates over a wide junction temperature range of -55°C to 175°C, suitable for demanding industrial environments.
The device is designed for applications such as motor drives, power supplies, and induction heating where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220-3 with TO-220 supplier device package.
-55°C to 175°C.
2V maximum at 15V Vge and 20A Ic.
140µJ turn-on and 560µJ turn-off at 400V, 20A, 12 Ohm, 15V.
63nC.
166ns.