| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,020 pcs
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10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,597 pcs
|
2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STGP19NC60KD is a single IGBT transistor designed for power switching applications. It features a high collector-emitter voltage rating of 600V and a continuous collector current capability of 35A.
With a power dissipation of 125W, this device is suitable for various power electronics designs. It operates within a temperature range of -55°C to 150°C. The transistor is housed in a standard TO-220-3 package and is designed for through-hole mounting.
Key electrical characteristics include a maximum gate-emitter voltage of ±20V, a Vce(on) of 2.75V at 15V and 12A, and switching energy values of 165µJ (on) and 255µJ (off). It also has a gate charge of 55 nC and a reverse recovery time of 31 ns.
This IGBT transistor is a reliable component for applications requiring robust power handling and efficient switching. Its standard specifications and package make it a versatile choice for designers.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600 V.
The continuous collector current rating is 35 A.
The power dissipation is 125 W.
The operating temperature range is -55°C to 150°C.
The STGP19NC60KD is supplied in a TO-220-3 package.
The STGP19NC60KD is designed for through-hole mounting.
The typical switching energy is 165µJ (on) and 255µJ (off).