STGP19NC60KD The STMicroelectronics STGP19NC60KD is a 600V IGBT transistor designed for power applications. It offers a continuous collector current of 35A and a power dissipation of 125W.
Mfr Part #:

STGP19NC60KD

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGP19NC60KD is a 600V IGBT transistor designed for power applications. It offers a continuous collector current of 35A and a power dissipation of 125W.
✓ Total Stock: 12,617 pcs
$ Price Range: $4.16

STGP19NC60KD Available from 2 distributors

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✓ Non-Authorised
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2,597 pcs
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STGP19NC60KD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Mounting Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Technology
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

STGP19NC60KD Description

Short technical summary and product information.

The STMicroelectronics STGP19NC60KD is a single IGBT transistor designed for power switching applications. It features a high collector-emitter voltage rating of 600V and a continuous collector current capability of 35A.

 

With a power dissipation of 125W, this device is suitable for various power electronics designs. It operates within a temperature range of -55°C to 150°C. The transistor is housed in a standard TO-220-3 package and is designed for through-hole mounting.

 

Key electrical characteristics include a maximum gate-emitter voltage of ±20V, a Vce(on) of 2.75V at 15V and 12A, and switching energy values of 165µJ (on) and 255µJ (off). It also has a gate charge of 55 nC and a reverse recovery time of 31 ns.

 

This IGBT transistor is a reliable component for applications requiring robust power handling and efficient switching. Its standard specifications and package make it a versatile choice for designers.

STGP19NC60KD Quick Information

Product Type: IGBT Transistor
Series: Stgp19nc60kd
Canonical Name: STMicroelectronics STGP19NC60KD IGBT Transistor
Subcategory: IGBT

STGP19NC60KD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGP19NC60KD Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGP19NC60KD Features

  • 600V collector-emitter voltage rating.
  • 35A continuous collector current.
  • 125W maximum power dissipation.
  • TO-220 package for through-hole mounting.
  • Wide operating temperature range.

STGP19NC60KD Applications

  • Power supply circuit designs.
  • Motor control applications.
  • Inverter circuit applications.
  • Switching power supply modules.

STGP19NC60KD FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the STGP19NC60KD?

The maximum collector-emitter voltage is 600 V.

What is the continuous collector current rating?

The continuous collector current rating is 35 A.

What is the power dissipation of this IGBT transistor?

The power dissipation is 125 W.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the STGP19NC60KD supplied in?

The STGP19NC60KD is supplied in a TO-220-3 package.

How is the STGP19NC60KD mounted?

The STGP19NC60KD is designed for through-hole mounting.

What is the typical switching energy for the STGP19NC60KD?

The typical switching energy is 165µJ (on) and 255µJ (off).

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