| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGP10NC60HD is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a robust 600V collector-emitter voltage and a continuous collector current rating of 20A, with a power dissipation of 65W.
This IGBT is housed in a TO-220-3 package, suitable for through-hole mounting. Key electrical characteristics include a maximum saturation voltage of 2.5V at 15V gate-emitter voltage and 5A collector current. Switching performance is detailed with turn-on delay and fall times of 14.2ns and 72ns respectively, and switching energies of 31.8µJ (on) and 95µJ (off). The gate charge is specified at 19.2 nC, and the reverse recovery time is 22 ns.
Operating temperature ranges from -55°C to 150°C (TJ), making it suitable for demanding environments. The input type is standard. Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are noted with low confidence due to lack of verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-220-3 (through-hole).
-55°C to 150°C (junction temperature).
20A.
65W.
Turn-on delay time 14.2ns, fall time 72ns (tested at 390V, 5A, 10Ohm, 15V).
19.2 nC.