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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| Gate-Emitter Leakage Current | |
| IGBT Type | |
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| Maximum Gate Emitter Voltage | |
| Mounting Type | |
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| Power Dissipation | |
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| Switching Energy | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STGF6M65DF2 is a Trench Field Stop IGBT designed by STMicroelectronics for high-efficiency power switching. It features a maximum collector-emitter voltage of 650V and a continuous collector current rating of 12A at 25°C. The device offers low saturation voltage (2V max at 15V gate, 6A) and fast switching with on-energy of 36µJ and off-energy of 200µJ. The gate charge is 21.2 nC, enabling low drive power requirements.
This IGBT is housed in a TO-220FP-3 through-hole package, which provides full insulation for easy mounting and heat sinking. The operating junction temperature range is -55°C to 175°C, making it suitable for demanding environments. With a power dissipation of 24.2W, it is well-suited for applications such as motor drives, power inverters, induction heating, and UPS systems.
The Trench Field Stop technology combines low conduction losses with fast switching, reducing overall system power dissipation. The part is RoHS3 compliant and has an MSL of 1 (unlimited floor life), though these compliance claims are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
TO-220FP-3 (through-hole).
-55°C to 175°C (junction).
12 A at 25°C.
24.2 W.
21.2 nC.
36 µJ (on) and 200 µJ (off).