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STGF3NC120HD The STMicroelectronics STGF3NC120HD is an N-Channel IGBT Transistor with a 1200V rating and 6A continuous collector current. It is supplied in a TO-220FP package.
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STGF3NC120HD

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGF3NC120HD is an N-Channel IGBT Transistor with a 1200V rating and 6A continuous collector current. It is supplied in a TO-220FP package.
✓ Total Stock: 3,357 pcs
$ Price Range: $4.16

STGF3NC120HD Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
2,000 pcs
On Request
2000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,357 pcs
On Request
1357 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STGF3NC120HD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Failure Rate
Gate Charge
Input Type
Lead Style
Mounting Style
Mounting Type
Operating Temperature
Power
Power Dissipation
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Technology
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGF3NC120HD Description

Short technical summary and product information.

The STMicroelectronics STGF3NC120HD is a single N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a high collector-emitter voltage rating of 1200V and a continuous collector current of 6A at 25°C.

 

This IGBT transistor offers a power dissipation of 25W and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a collector-emitter saturation voltage of 2.8V at 15V gate-emitter voltage and 3A collector current, a gate charge of 24 nC, and a reverse recovery time of 51 ns. Switching energies are rated at 236µJ (on) and 290µJ (off).

 

The STGF3NC120HD is packaged in a TO-220-3 Full Pack (TO-220FP) configuration and is designed for through-hole mounting. Its standard input type makes it suitable for various power electronics designs.

 

This component belongs to the 900 - 1300V IGBTs series, indicating its suitability for medium to high voltage applications. The device is constructed using Silicon technology.

STGF3NC120HD Quick Information

Product Type: IGBT Transistor
Canonical Name: STMicroelectronics STGF3NC120HD N-Channel IGBT Transistor
Subcategory: IGBTs

STGF3NC120HD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGF3NC120HD Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGF3NC120HD Features

  • 1200V collector-emitter voltage rating.
  • 6A continuous collector current.
  • 25W power dissipation.
  • TO-220FP package for through-hole mounting.
  • Wide operating temperature range.

STGF3NC120HD Applications

  • Suitable for power switching circuits.
  • Used in medium to high voltage applications.
  • Designed for industrial power supplies.
  • Applicable in motor control systems.

STGF3NC120HD FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of STGF3NC120HD?

The maximum collector-emitter voltage (VCEO) is 1200 V.

What is the maximum continuous collector current?

The maximum continuous collector current is 6 A at 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package is the STGF3NC120HD available in?

It is available in a TO-220-3 FP (TO-220FP) through-hole package.

What is the typical gate charge?

The typical gate charge is 24 nC.

What are the typical switching energy values?

Typical switching energy is 236 µJ (turn-on) and 290 µJ (turn-off) at 800V, 3A, 10Ω, 15V.

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