| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,300 pcs
|
3300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGF30M65DF2 is a single IGBT transistor designed for power switching applications. It features a Trench Field Stop IGBT type and operates at a voltage of 650V and a current of 60A.
Key electrical characteristics include a Vce(on) maximum of 2V at 15V and 30A, with switching energy ratings of 300µJ (on) and 960µJ (off). The device has a gate charge of 80 nC and a reverse recovery time of 140 ns. Its power dissipation is rated at 38W.
This IGBT is suitable for applications requiring high voltage and current handling. It operates within a temperature range of -55°C to 175°C (TJ). The mounting type is Through Hole, and it comes in a TO-220-3 Full Pack or TO-220FP package.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. The part number for ordering is STGF30M65DF2.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650V.
The component uses a TO-220-3 Full Pack or TO-220FP through-hole package.
The device operates reliably between -55°C and 175°C junction temperature.
The continuous collector current is rated at 60A.
Maximum power dissipation is specified as 38W.
The total gate charge measures 80nC.