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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,250 pcs
|
2250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STGF20H60DF is an Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, rated for a collector-emitter voltage of 600V and a continuous collector current of 40A. It dissipates up to 37W of power and is housed in a TO220FP through-hole package. This device is designed for high-voltage switching applications such as power inverters and motor drives, where efficient power control is required. The TO220FP package offers straightforward mounting on printed circuit boards and can be used with heatsinks for improved thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STGF20H60DF IGBT has a collector-emitter voltage rating of 600V.
The STGF20H60DF is packaged in a TO220FP through-hole package.
The STGF20H60DF is rated for 40A continuous collector current.
The STGF20H60DF dissipates up to 37W of power.