| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,950 pcs
|
2950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGF10NB60SD is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a high voltage rating of 600V and a continuous current capability of 23A, with a power dissipation of 25W.
This IGBT is suitable for through-hole mounting and comes in a TO-220FP package. Key electrical characteristics include a saturation voltage (Vce(on)) of 1.75V at 15V gate voltage and 10A current, a gate charge of 33nC, and a reverse recovery time (trr) of 37ns. The switching energy is rated at 600µJ for turn-on and 5mJ for turn-off.
Operating within a temperature range of -55°C to 150°C (TJ), the STGF10NB60SD is designed for robust performance. Its standard input type and TO-220FP package make it a versatile component for various industrial and electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STGF10NB60SD is rated at 600V collector-emitter voltage.
The STGF10NB60SD is available in a TO-220-3 Full Pack through-hole package.
The STGF10NB60SD operates from -55°C to 150°C junction temperature.
The continuous collector current rating is 23A.
Turn-on switching energy is 600µJ and turn-off is 5mJ.
Total gate charge is 33nC.
Reverse recovery time is 37ns.