| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,650 pcs
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2650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| IGBT Type | |
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| Vce(on) (Max) @ Vge, Ic | |
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The STMicroelectronics STGF10H60DF is a single IGBT transistor from the Trench Gate H series. It is designed for high-speed switching applications and features a 600V collector-emitter voltage and a 20A continuous collector current at 25°C.
This IGBT transistor has a power dissipation of 30W and operates within a temperature range of -55°C to 175°C. Key electrical characteristics include a typical Vce(on) of 1.95V at 15V/10A, a gate charge of 57 nC, and switching energies of 83 µJ (on) and 140 µJ (off).
The STGF10H60DF is packaged in a TO-220FP (TO-220-3 Full Pack) through-hole mounting style and comes in tube packaging. It is constructed using Silicon (Si) technology and has a typical reverse recovery time of 107 ns.
This component is suitable for various power electronics applications requiring efficient and fast switching. Its robust design and specifications make it a reliable choice for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the STGF10H60DF is 600V.
The continuous collector current (Ic) rating is 20A at 25°C.
The power dissipation (Pd) is 30W.
The operating temperature range is -55°C to 175°C.
The STGF10H60DF is supplied in a TO-220FP package.
Yes, the STGF10H60DF is RoHS3 Compliant.