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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The STGE50NB60HD is an N-Channel IGBT from NA, part of the PowerMESH™ IGBT family. It is designed for high-frequency applications up to 120kHz, offering excellent switching performance and a low voltage drop.
Key electrical specifications include a collector-emitter voltage of 600V, a continuous collector current of 50A at 100°C (100A at 25°C), and a pulsed collector current of 400A. The device features a low collector-emitter saturation voltage, typically 1.9V at 125°C and a maximum of 2.8V. Its high input impedance and low gate charge contribute to efficient operation.
This IGBT is suitable for applications such as high-frequency motor controls and SMPS and PFC in both hard switch and resonant topologies. It is packaged in an ISOTOP package.
Thermal characteristics include a junction-to-case thermal resistance of 0.416°C/W and a junction-to-ambient thermal resistance of 30°C/W. The maximum operating junction temperature is 150°C.
The maximum collector-emitter voltage is 600V.
The STGE50NB60HD is available in an ISOTOP package.
The storage temperature range is -65°C to 150°C, and the maximum operating junction temperature is 150°C.
The maximum continuous collector current at 25°C is 100A.
The maximum power dissipation is 300W at 25°C case temperature.
The gate threshold voltage is typically 3.5V.