STGE50NB60HD The STMicroelectronics STGE50NB60HD is an N-channel PowerMESH™ IGBT module with a 600V collector-emitter voltage and 100A continuous current capability. It features a 300W power dissipation and is housed in an ISOTOP package.
Mfr Part #:

STGE50NB60HD

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGE50NB60HD is an N-channel PowerMESH™ IGBT module with a 600V collector-emitter voltage and 100A continuous current capability. It features a 300W power dissipation and is housed in an ISOTOP package.
✓ Total Stock: 1,200 pcs
$ Price Range: $103.07

STGE50NB60HD Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request 05+ On Request On Request

STGE50NB60HD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Configuration
Current
Input
Input Capacitance (Cies) @ Vce
Mounting Type
NTC Thermistor
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Vce(on) (Max) @ Vge, Ic
Voltage

STGE50NB60HD Description

Short technical summary and product information.

The STMicroelectronics STGE50NB60HD is an advanced N-channel IGBT module from the PowerMESH™ family, designed for high-frequency applications up to 120kHz. It offers superior performance with a high input impedance and low on-voltage drop (Vcesat).

 

Key electrical specifications include a 600V collector-emitter voltage (VCES), a continuous collector current of 100A at 25°C (and 50A at 100°C), and a maximum power dissipation of 300W at 25°C. The module exhibits a low saturation voltage of typically 2.3V at 15V gate-emitter voltage and 50A collector current.

 

This IGBT module is co-packaged with a TURBOSWITCH™ antiparallel diode. It operates at junction temperatures up to 150°C and features low gate charge for efficient switching. The STGE50NB60HD is optimized for high switching performance, making it suitable for applications requiring reduced fall times while maintaining a low voltage drop.

 

Designed for robust performance, the module is mounted via chassis mount and comes in an ISOTOP package (SOT-227-4, miniBLOC). Its thermal resistance junction-to-case is a maximum of 0.416°C/W, facilitating effective heat dissipation.

STGE50NB60HD Quick Information

Product Type: IGBT Module
Series: STGE
Canonical Name: STMicroelectronics STGE50NB60HD N-Channel PowerMESH™ IGBT Module
Subcategory: Transistors - IGBTs

STGE50NB60HD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGE50NB60HD Estimated Pricing

Qty Low High
1+ $103.07 $103.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGE50NB60HD Features

  • High input impedance, voltage driven IGBT.
  • Low on-voltage drop (Vcesat).
  • High current capability up to 100A.
  • Optimized for very high frequency operation.
  • Co-packaged with antiparallel diode.

STGE50NB60HD Applications

  • Suitable for high frequency motor controls.
  • Used in SMPS and PFC applications.
  • Designed for hard switch topologies.
  • Applicable in resonant topologies.

STGE50NB60HD FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the STGE50NB60HD?

The maximum collector-emitter voltage (VCES) for the STGE50NB60HD is 600V.

What is the continuous collector current rating at 25°C?

The continuous collector current (IC) at 25°C is 100A.

What is the maximum power dissipation of the STGE50NB60HD?

The total power dissipation (PTOT) at 25°C is 300W.

What is the operating temperature range for this IGBT module?

The maximum operating junction temperature (Tj) is 150°C.

What type of package is the STGE50NB60HD in?

The STGE50NB60HD is supplied in an ISOTOP package, also known as SOT-227-4, miniBLOC.

How is the STGE50NB60HD mounted?

This IGBT module is designed for chassis mount.

What is the typical collector-emitter saturation voltage at 15V and 50A?

The typical collector-emitter saturation voltage (VCE(sat)) at 15V gate-emitter voltage and 50A collector current is 2.3V.

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