| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,500 pcs
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7500 pcs | On Request | 1 | On Request | On Request | 1140 | On Request | On Request |
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| Gate Charge | |
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| Switching Energy | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGD8NC60KT4 is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 15A, with a pulsed capability of 30A.
This IGBT operates with a maximum power dissipation of 62W and has a low saturation voltage (Vce(on)) of 2.75V at 15V gate-emitter voltage and 3A collector current. The switching energy is rated at 55µJ for turn-on and 85µJ for turn-off, with a standard input type and a gate charge of 19nC. The turn-on and turn-off times are specified as 17ns and 72ns respectively at 25°C.
Designed for surface mounting, the STGD8NC60KT4 comes in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package. It operates within a temperature range of -55°C to 150°C (TJ). The part belongs to the PowerMESH™ series.
This component is suitable for various power electronics applications requiring efficient switching and robust performance. Its DPAK package is ideal for space-constrained designs where surface mounting is preferred.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 600V.
The continuous collector current (Ic) is 15A.
The maximum power dissipation is 62W.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package.
The switching energy is 55µJ for turn-on and 85µJ for turn-off.
The Vce(on) maximum is 2.75V at 15V Vge and 3A Ic.