| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STGD7NB60ST4 is an Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics. It is rated for a maximum collector-emitter voltage of 600V and a continuous collector current of 15A. The device can dissipate up to 55W of power.
The IGBT features a collector-emitter saturation voltage of 1.6V, which aids in reducing conduction losses. It is offered in a DPAK surface-mount package, suitable for compact power circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The collector-emitter saturation voltage is 1.6V maximum.
The continuous collector current rating is 15A.
The maximum power dissipation is 55W.
The package type is DPAK.