STGD6M65DF2 The STMicroelectronics STGD6M65DF2 is a Trench Gate Field-Stop IGBT transistor designed for high voltage applications. It features a 650V rating and a 12A continuous collector current.
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STGD6M65DF2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGD6M65DF2 is a Trench Gate Field-Stop IGBT transistor designed for high voltage applications. It features a 650V rating and a 12A continuous collector current.
Total Stock: 5,000 pcs
$ Price Range: $4.16

STGD6M65DF2 Available from 1 distributor

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STGD6M65DF2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Continuous Collector Current (Maximum @ 25 °C)
Current
Gate Charge
Gate-Emitter Leakage Current
Gate-Emitter Voltage
IGBT Type
Input Type
Maximum Operating Temperature
Mounting Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Switching Energy (Nominal @ on)
Td (on
Technology
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

STGD6M65DF2 Description

Short technical summary and product information.

The STMicroelectronics STGD6M65DF2 is a single IGBT transistor belonging to the Trench Gate Field-Stop technology family. It is designed for high voltage applications, offering a maximum collector-emitter voltage of 650V and a continuous collector current of 12A at 25°C.

 

Key electrical characteristics include a collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 6A collector current, and a gate charge of 21.2 nC. The device has a power dissipation rating of 88W and operates within a temperature range of -55°C to 175°C.

 

This IGBT transistor is housed in a surface-mount DPAK package (TO-252-3, SC-63) for easy integration into electronic circuits. The packaging is supplied in Cut Tape format. Its standard input type and trench field stop technology make it suitable for various power switching applications.

STGD6M65DF2 Quick Information

Product Type: IGBT Transistor
Series: Stgd6m65df2
Canonical Name: STMicroelectronics STGD6M65DF2 Trench Gate Field-Stop IGBT Transistor
Subcategory: Igbts

STGD6M65DF2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGD6M65DF2 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGD6M65DF2 Features

  • 650V collector-emitter voltage rating.
  • 12A continuous collector current.
  • 88W power dissipation.
  • Surface mount DPAK package.
  • Wide -55°C to 175°C operating temperature.

STGD6M65DF2 Applications

  • Suitable for high voltage switching.
  • Power supply applications.
  • Motor control circuits.
  • Industrial power systems.

STGD6M65DF2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

650V.

What is the continuous collector current rating?

12A at 25°C.

What is the operating temperature range?

-55°C to 175°C.

What package is the STGD6M65DF2 available in?

TO-252-3 (DPak) surface-mount package.

What is the gate-emitter voltage rating?

20V maximum.

What is the switching energy?

36µJ (on) and 200µJ (off) at 400V, 6A, 22Ω, 15V.

What is the reverse recovery time?

140ns.

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