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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector - Emitter Saturation Voltage | |
| Continuous Collector Current (Maximum @ 25 °C) | |
| Current | |
| Gate Charge | |
| Gate-Emitter Leakage Current | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| Input Type | |
| Maximum Operating Temperature | |
| Mounting Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Nominal @ on) | |
| Td (on | |
| Technology | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGD6M65DF2 is a single IGBT transistor belonging to the Trench Gate Field-Stop technology family. It is designed for high voltage applications, offering a maximum collector-emitter voltage of 650V and a continuous collector current of 12A at 25°C.
Key electrical characteristics include a collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 6A collector current, and a gate charge of 21.2 nC. The device has a power dissipation rating of 88W and operates within a temperature range of -55°C to 175°C.
This IGBT transistor is housed in a surface-mount DPAK package (TO-252-3, SC-63) for easy integration into electronic circuits. The packaging is supplied in Cut Tape format. Its standard input type and trench field stop technology make it suitable for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
12A at 25°C.
-55°C to 175°C.
TO-252-3 (DPak) surface-mount package.
20V maximum.
36µJ (on) and 200µJ (off) at 400V, 6A, 22Ω, 15V.
140ns.