| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGD5NB120SZT4 is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a maximum collector-emitter voltage of 1200V and can handle a continuous collector current of 10A, with a power dissipation rating of 75W.
This IGBT is suitable for surface mounting, utilizing the TO-252-3, DPak (2 Leads + Tab), SC-63 package. Its operating temperature range is from -55°C to 150°C (TJ), making it robust for various environmental conditions. The device has a typical turn-on delay time of 690ns and switching energies of 2.59mJ (on) and 9mJ (off).
The STGD5NB120SZT4 has a collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 5A collector current. It is classified as a standard input type IGBT, providing reliable performance in power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
TO-252-3 (DPAK) surface mount.
-55°C to 150°C (junction).
10A.
75W.
2V at 15V gate voltage and 5A collector current.
2.59mJ (on) and 9mJ (off).