| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,630 pcs
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2630 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STGD20N45LZAG is a single Insulated Gate Bipolar Transistor (IGBT) designed for robust performance in various applications. This device offers a maximum collector-emitter breakdown voltage of 450V, making it suitable for high-voltage power management.
Key electrical characteristics include a maximum collector current of 25A and a power dissipation rating of 125W. The IGBT exhibits a low on-state voltage (Vce(on)) of 1.25V at 4V gate-source voltage and 6A collector current, ensuring efficient power transfer. Its typical switching times are rated at 1.1µs and 4.6µs, with a gate charge of 26nC.
This component is designed for surface mounting, utilizing the TO-252 (D-PAK) package, which facilitates integration into compact electronic designs. The operating temperature range spans from -55°C to 175°C (TJ), providing reliability in diverse environmental conditions.
The STGD20N45LZAG is specified for automotive applications, indicating a high level of quality and reliability. It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 450V.
The maximum collector current is 25A.
The operating junction temperature range is -55°C to 175°C.
It comes in a surface-mount TO-252-3 (DPak) package, also known as SC-63.
The maximum power dissipation is 125W.
The typical gate charge is 26nC.