| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGD10NC60KDT4 is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a robust 600V voltage rating and a significant 20A current capacity, with a power dissipation of 62W.
This IGBT is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, making it suitable for surface mount assembly. The operating temperature range is -55°C to 150°C (TJ), ensuring reliable performance in demanding environments. Key electrical characteristics include a low saturation voltage of 2.5V @ 15V, 5A, and fast switching times with a typical Td(on) of 17ns/72ns and a reverse recovery time of 22 ns.
With a gate charge of 19 nC and switching energy ratings of 55µJ (on) and 85µJ (off), the STGD10NC60KDT4 is engineered for efficient power conversion. Its standard input type and surface mount capability make it a versatile component for various industrial and electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
20A.
-55°C to 150°C (junction temperature).
TO-252-3 (DPak) surface-mount package.
2.5V maximum at VGE=15V, IC=5A.
55µJ for turn-on and 85µJ for turn-off (test conditions: 390V, 5A, 10Ω, 15V).
19 nC.