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STGB4M65DF2 The STGB4M65DF2 is a Trench Field Stop IGBT from STMicroelectronics. It offers a 650V collector-emitter breakdown voltage and 8A collector current.
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STGB4M65DF2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STGB4M65DF2 is a Trench Field Stop IGBT from STMicroelectronics. It offers a 650V collector-emitter breakdown voltage and 8A collector current.
✓ Total Stock: 10,000 pcs
$ Price Range: $4.16

STGB4M65DF2 Available from 1 distributor

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10,000 pcs
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STGB4M65DF2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGB4M65DF2 Description

Short technical summary and product information.

The STMicroelectronics STGB4M65DF2 is a single IGBT (Insulated Gate Bipolar Transistor) designed for efficient power switching applications. It features a TRENCH GATE FIELD-STOP IGBT structure, providing robust performance.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 650V and a continuous collector current rating of 8A. The collector-emitter saturation voltage (Vce(on)) is 2.1V at 15V gate voltage and 4A collector current. Switching characteristics are notable with a typical turn-on delay of 12ns and turn-off delay of 86ns, and switching energies of 40µJ (on) and 136µJ (off). The device also has a typical gate charge of 15.2 nC and a reverse recovery time of 133 ns.

 

With a power dissipation of 68W, the STGB4M65DF2 operates across a wide temperature range from -55°C to 175°C (junction temperature). It is housed in a surface-mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, making it suitable for various industrial and consumer electronics power supply circuits, motor drives, and inverter applications requiring high-efficiency and high-speed switching.

 

The input type is standard, and the device is RoHS3 compliant, MSL 1, and REACH unaffected, though these compliance statuses are unverified.

STGB4M65DF2 Quick Information

Product Type: IGBT
Canonical Name: STGB4M65DF2 Trench Field Stop IGBT
Subcategory: Single

STGB4M65DF2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGB4M65DF2 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGB4M65DF2 Features

  • 650V collector-emitter breakdown voltage.
  • 8A continuous collector current rating.
  • Fast switching with low energy loss.
  • Wide -55°C to 175°C operating temperature.
  • TO-263 surface-mount package.

STGB4M65DF2 Applications

  • Used in power supply circuits.
  • Suitable for motor drive applications.
  • Ideal for inverter circuits.
  • Applicable to UPS systems.
  • High-speed switching applications.

STGB4M65DF2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

650V

What is the maximum collector current?

8A

What is the operating temperature range?

-55°C to 175°C

What is the package type?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

What is the typical gate charge?

15.2 nC

What is the switching energy?

40 µJ (turn-on) and 136 µJ (turn-off)

What is the collector-emitter saturation voltage?

2.1V at 15V, 4A

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