| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The STMicroelectronics STGB35N35LZ-1 is a single Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. It features a high collector-emitter breakdown voltage of 345V and a continuous collector current rating of 40A, with a maximum power dissipation of 176W.
This IGBT utilizes a logic-level input for easy integration with control circuits. It is housed in a TO-262-3 Long Leads, I²Pak package, suitable for through-hole mounting. The device exhibits a typical turn-on delay of 1.1µs and a turn-off delay of 26.5µs, with a collector-emitter saturation voltage of 1.7V at 4.5V gate drive and 15A.
Operating across a wide temperature range from -55°C to 175°C (junction), the STGB35N35LZ-1 is built for reliability in harsh environments. Its specifications make it suitable for use in power supply circuits, motor drives, inverter circuits, and uninterruptible power supplies (UPS).
The PowerMESH™ series technology contributes to low conduction and switching losses, enhancing overall system efficiency. The through-hole mounting type simplifies assembly in many industrial and consumer electronics designs requiring robust power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 345 V.
The continuous collector current is 40 A.
The maximum power dissipation is 176 W.
The operating temperature range is -55°C to 175°C (junction).
It comes in a TO-262-3 Long Leads, I²Pak, TO-262AA package.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level is 1.