STGB35N35LZ-1 The STMicroelectronics STGB35N35LZ-1 is a single IGBT transistor designed for high-efficiency power switching. It offers a 345V collector-emitter breakdown voltage and a 40A continuous collector current.
Mfr Part #:

STGB35N35LZ-1

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGB35N35LZ-1 is a single IGBT transistor designed for high-efficiency power switching. It offers a 345V collector-emitter breakdown voltage and a 40A continuous collector current.
✓ Total Stock: 10,000 pcs
$ Price Range: $4.16

STGB35N35LZ-1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request 15+ On Request On Request

STGB35N35LZ-1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

STGB35N35LZ-1 Description

Short technical summary and product information.

The STMicroelectronics STGB35N35LZ-1 is a single Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. It features a high collector-emitter breakdown voltage of 345V and a continuous collector current rating of 40A, with a maximum power dissipation of 176W.

 

This IGBT utilizes a logic-level input for easy integration with control circuits. It is housed in a TO-262-3 Long Leads, I²Pak package, suitable for through-hole mounting. The device exhibits a typical turn-on delay of 1.1µs and a turn-off delay of 26.5µs, with a collector-emitter saturation voltage of 1.7V at 4.5V gate drive and 15A.

 

Operating across a wide temperature range from -55°C to 175°C (junction), the STGB35N35LZ-1 is built for reliability in harsh environments. Its specifications make it suitable for use in power supply circuits, motor drives, inverter circuits, and uninterruptible power supplies (UPS).

 

The PowerMESH™ series technology contributes to low conduction and switching losses, enhancing overall system efficiency. The through-hole mounting type simplifies assembly in many industrial and consumer electronics designs requiring robust power handling.

STGB35N35LZ-1 Quick Information

Product Type: IGBT Transistor
Series: PowerMESH
Canonical Name: STMicroelectronics STGB35N35LZ-1 IGBT
Subcategory: Single IGBT

STGB35N35LZ-1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGB35N35LZ-1 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGB35N35LZ-1 Features

  • 345V collector-emitter breakdown voltage.
  • 40A continuous collector current rating.
  • 176W maximum power dissipation.
  • TO-262 through-hole mounting package.
  • Logic level input type.

STGB35N35LZ-1 Applications

  • Used in power supply circuits.
  • Suitable for motor drive applications.
  • Applied in inverter circuit designs.
  • Applicable for UPS systems.

STGB35N35LZ-1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the STGB35N35LZ-1?

The maximum collector-emitter breakdown voltage is 345 V.

What is the continuous collector current rating?

The continuous collector current is 40 A.

What is the power dissipation of the STGB35N35LZ-1?

The maximum power dissipation is 176 W.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (junction).

What type of package does the STGB35N35LZ-1 come in?

It comes in a TO-262-3 Long Leads, I²Pak, TO-262AA package.

Is the STGB35N35LZ-1 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

Home
Account

Categories