| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,020 pcs
|
8020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| IGBT Type | |
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| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGB30M65DF2 is a single IGBT transistor belonging to the 600-650V IGBTs series. It is designed for high-power applications, rated for 650V and capable of handling 60A continuous current with a power dissipation of 258W. The device utilizes Trench Field Stop technology for efficient switching.
Key electrical characteristics include a collector-emitter saturation voltage (Vce(on)) of 2V at 15V and 30A, a gate charge of 80 nC, and typical switching energies of 300 µJ for turn-on and 960 µJ for turn-off. The reverse recovery time (trr) is rated at 140 ns.
This IGBT transistor operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. The standard packaging is on a reel, with a factory pack quantity of 1000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.
-55°C to 175°C (junction).
Trench Field Stop.
80 nC.
300 µJ.
140 ns.