| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,395 pcs
|
10395 pcs | On Request | 1 | On Request | On Request | 0939+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STGB10NB60ST4 is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics. It is rated for a maximum collector-emitter voltage of 600V and a continuous collector current of 29A, with a pulsed current capability of 80A. The device has a maximum power dissipation of 80W.
The IGBT exhibits a typical Vce(on) of 1.75V at 15V gate-emitter voltage and 10A collector current. Switching energy is specified as 600µJ during turn-on and 5mJ during turn-off. These characteristics make it suitable for medium-power switching applications.
The device is housed in a D2PAK (TO-263) surface-mount package, which allows for efficient heat dissipation and compact PCB design. It is designed for use in power converters, motor drives, and other industrial applications requiring high voltage and current handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
29A.
80W.
D2PAK (TO-263).
600µJ (on) and 5mJ (off).
1.75V maximum.
80A.