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STGB10NB40LZT4 The STGB10NB40LZT4 is an IGBT transistor from STMicroelectronics with a 440V collector-emitter breakdown voltage and a 20A current rating. It is supplied in a D2PAK surface mount package.
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STGB10NB40LZT4

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STGB10NB40LZT4 is an IGBT transistor from STMicroelectronics with a 440V collector-emitter breakdown voltage and a 20A current rating. It is supplied in a D2PAK surface mount package.
✓ Total Stock: 6,565 pcs
$ Price Range: $4.16

STGB10NB40LZT4 Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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6,565 pcs
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6565 pcs On Request 1 On Request On Request On Request On Request On Request
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STGB10NB40LZT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Failure Rate
Gate Charge
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGB10NB40LZT4 Description

Short technical summary and product information.

The STGB10NB40LZT4 is an IGBT transistor manufactured by STMicroelectronics, designed for power switching applications. It offers a high collector-emitter breakdown voltage of 440V and a continuous collector current rating of 20A, with a pulsed current capability of 40A.

 

This device has a maximum power dissipation of 150W and a low saturation voltage of 1.8V at 4.5V gate drive and 10A collector current. Switching characteristics include a typical turn-on delay of 1.3µs and turn-off delay of 8µs, with switching energies of 2.4mJ (on) and 5mJ (off).

 

The IGBT is housed in a D2PAK (TO-263-3) surface mount package, suitable for automated assembly processes. It operates within a temperature range of -55°C to 175°C (TJ).

 

Key electrical parameters include a gate charge of 28nC and a standard input type. The series designation includes Automotive, AEC-Q101, and PowerMESH?.

STGB10NB40LZT4 Quick Information

Product Type: IGBT Transistor
Series: DSH, Automotive, AEC-Q101, PowerMESH?
Canonical Name: STGB10NB40LZT4 IGBT
Subcategory: IGBT

STGB10NB40LZT4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGB10NB40LZT4 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGB10NB40LZT4 Features

  • 440V collector-emitter breakdown voltage.
  • 20A continuous collector current.
  • 150W maximum power dissipation.
  • D2PAK surface mount package.
  • Standard input type for versatility.

STGB10NB40LZT4 Applications

  • Suitable for high-voltage power applications.
  • Ideal for switching power supplies.
  • Used in motor control circuits.
  • Applicable in power factor correction.
  • Designed for automotive applications.

STGB10NB40LZT4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the STGB10NB40LZT4?

440V.

What is the maximum continuous collector current?

20A.

What is the package type of the STGB10NB40LZT4?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, with supplier device package D2PAK.

What is the operating temperature range?

-55°C to 175°C (junction).

What is the typical gate charge?

28 nC.

What is the maximum power dissipation?

150W.

Does the STGB10NB40LZT4 have AEC-Q101 qualification?

The part is listed in the Automotive, AEC-Q101, PowerMESH series.

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