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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGB10M65DF2 is a single IGBT transistor from the Trench Field Stop family. It offers a high breakdown voltage of 650V and a continuous collector current rating of 20A, with a power dissipation of 115W. The transistor features a low collector-emitter saturation voltage of 2V at 15V gate-emitter voltage and 10A collector current. Switching characteristics include a turn-on delay of 19ns/91ns and switching energies of 120µJ (on) and 270µJ (off). The reverse recovery time is 96ns.
This IGBT is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB format, suitable for surface mounting. The operating temperature range is from -55°C to 175°C (TJ). It is classified under the 'Transistors - IGBTs - Single' category.
Key electrical parameters are supported by specific test conditions, including 400V, 10A, 22 Ohm, and 15V. The gate charge is 28 nC. The input type is standard.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, surface mount.
-55°C to 175°C (junction temperature).
20A.
2V maximum at 15V gate voltage and 10A collector current.
Turn-on energy is 120µJ, turn-off energy is 270µJ at 400V, 10A, 22Ω gate resistance.
28nC.