| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,710 pcs
|
1710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STFW8N120K5 is an N-Channel MOSFET designed for power applications. It features a high drain-source voltage (Vdss) of 1200V and a continuous current rating of 6A at the case temperature.
The MOSFET has a maximum on-resistance (Rds On) of 2 Ohms at 2.5A and 10V gate-source voltage. The gate charge (Qg) is 13.7 nC maximum at 10V, and the input capacitance (Ciss) is 505 pF maximum at 100V.
With an operating temperature range of -55°C to 150°C (TJ), this component is suitable for various thermal environments. The gate threshold voltage (Vgs(th)) is 5V maximum at 100µA, and the maximum gate-source voltage (Vgs) is ±30V.
The STFW8N120K5 is packaged in a TO-3PF case and utilizes through-hole mounting. Its technology is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1200V.
The maximum continuous drain current is 6A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 2 Ohms at a gate-source voltage of 10V and drain current of 2.5A.
It comes in a TO-3P-3 Full Pack package (supplier device package TO-3PF) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage (Vgs(th)) is 5V at a drain current of 100µA.
The maximum input capacitance (Ciss) is 505pF at a drain-source voltage of 100V.