| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,120 pcs
|
24120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,350 pcs
|
13350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,163 pcs
|
9163 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,543 pcs
|
1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STFW4N150 is an N-Channel power MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications with a maximum drain-source voltage of 1500V and a continuous drain current of 4A at 25°C. The device exhibits a maximum on-resistance of 7 Ohm when driven at 2A with a 10V gate-source voltage.
The MOSFET features a typical gate charge of 50 nC and an input capacitance of 1300 pF, which influence switching performance. The maximum gate threshold voltage is 5V at 250 µA, and the gate-source voltage is rated to ±30V. Power dissipation is rated at 63W (case temperature). The device is housed in an ISOWATT package, designed for through-hole mounting with efficient heat transfer to a heatsink.
This MOSFET is well-suited for circuits requiring high blocking voltage and moderate current, such as power supplies, inverters, and lighting systems. Designers should consider appropriate gate drive voltage (≥10V) to achieve minimum Rds(on) and thermal management based on the 63W dissipation rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 1500 V.
The continuous drain current (Id) at 25°C is 4 A.
The maximum on-resistance is 7 Ohm at 2A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) is 5V at 250 µA drain current.
The maximum gate-source voltage is ±30V.
The maximum power dissipation at case temperature is 63W.
The maximum gate charge (Qg) is 50 nC at 10V gate-source voltage.