STFW3N170 The STFW3N170 is an N-Channel MOSFET from STMicroelectronics with a 1700V drain-source voltage and 2.6A continuous current rating. It is housed in a TO-3PF package for through-hole mounting.
Mfr Part #:

STFW3N170

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STFW3N170 is an N-Channel MOSFET from STMicroelectronics with a 1700V drain-source voltage and 2.6A continuous current rating. It is housed in a TO-3PF package for through-hole mounting.
✓ Total Stock: 27,550 pcs
$ Price Range: $2.56

STFW3N170 Available from 3 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
21,900 pcs
21900 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
4,030 pcs
4030 pcs On Request 1 On Request On Request On Request On Request On Request
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1,620 pcs
1620 pcs On Request 1 On Request On Request On Request On Request On Request

STFW3N170 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STFW3N170 Description

Short technical summary and product information.

The STMicroelectronics STFW3N170 is an N-Channel MOSFET designed for high-voltage applications. It features a maximum drain-source voltage (Vdss) of 1700V and a continuous drain current rating of 2.6A at the case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 13 Ohms at 1.3A and 10V, a gate charge (Qg) of 44 nC, and an input capacitance (Ciss) of 1100 pF. The gate threshold voltage (Vgs(th)) is 5V at 250µA, and the maximum gate-source voltage is ±30V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 63W (Tc). It is packaged in a TO-3PF case and designed for through-hole mounting.

 

The STFW3N170 is suitable for various power switching applications where high voltage blocking capability is required.

STFW3N170 Quick Information

Product Type: MOSFET
Canonical Name: STFW3N170 N-Channel MOSFET
Subcategory: Single

STFW3N170 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STFW3N170 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STFW3N170 Features

  • 1700V drain-source voltage rating.
  • 2.6A continuous drain current.
  • 13 Ohm maximum on-resistance.
  • TO-3PF package for through-hole mounting.
  • Wide operating temperature range.

STFW3N170 Applications

  • High-voltage power supply switching circuits.
  • Inverter and converter applications.
  • Industrial motor control systems.
  • Power factor correction stages.
  • High-voltage DC-DC converters.

STFW3N170 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STFW3N170?

1700V.

What is the continuous drain current rating?

2.6A at case temperature.

What is the on-resistance?

13 Ohm maximum at 1.3A and 10V gate-source voltage.

What is the operating junction temperature range?

-55°C to 150°C.

What package is the STFW3N170 available in?

TO-3P-3 Full Pack (TO-3PF) through-hole package.

What is the gate charge?

44 nC at 10V gate-source voltage.

What is the input capacitance?

1100 pF at 100V drain-source voltage.

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