| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
128,850 pcs
|
128850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The STFW1N105K3 is an N-channel SuperMESH3™ Power MOSFET manufactured by STMicroelectronics. It offers a high drain-source voltage of 1050V and a continuous drain current of 1.4A at 25°C case temperature. The device features a low on-resistance of 11 Ohm typical at 600mA and 10V gate-source voltage, and a gate charge of 13 nC typical.
Designed for demanding switching applications, this MOSFET boasts minimized gate charge, excellent avalanche performance, and very low intrinsic capacitance. Its operating junction temperature ranges from -55°C to 150°C. The STFW1N105K3 is supplied in a TO-3PF package suitable for through-hole mounting.
Key electrical characteristics include an input capacitance of 180 pF at 100V and a gate-source voltage range of ±30V. The total power dissipation is rated at 60W at 25°C case temperature. This device is part of STMicroelectronics' SuperMESH™ technology advancements, providing superior dynamic performance and high avalanche capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1050V.
1.4A at Tc=25°C.
8Ω typical, maximum 11Ω at 600mA and 10V.
-55°C to 150°C junction temperature.
TO-3PF-3 Full Pack through-hole.
4.5V at 50µA.
SuperMESH3.