| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STFU23N80K5 is an N-Channel MOSFET with a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 16A at case temperature.
This MOSFET utilizes Metal Oxide Semiconductor technology and is housed in a TO-220-3 Full Pack package, suitable for through-hole mounting. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 5V at 100µA, a maximum gate-source voltage (Vgs) of ±30V, and a maximum Rds On of 280mOhm at 8A and 10V.
With a maximum power dissipation of 35W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the STFU23N80K5 is designed for robust performance in demanding environments. Its input capacitance (Ciss) is 1000pF at 100V, and gate charge (Qg) is 33nC at 10V.
This component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-220-3 Full Pack.
-55°C to 150°C (junction).
5V at 100µA.
280mOhm at 8A, 10V.
16A at case temperature.
Through hole.