| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STFI13N65M2 is an N-Channel MOSFET with a drain-source voltage (Vdss) rating of 650V. It is designed for through-hole mounting and comes in a TO-262-3 Full Pack, I²Pak package, also known as TO-281.
Key electrical characteristics include a maximum continuous drain current of 10A (Tc) and a maximum on-resistance (Rds On) of 430mOhm at 5A and 10V gate drive. The gate charge (Qg) is 17 nC maximum at 10V, and the gate threshold voltage (Vgs(th)) is 4V maximum at 250µA. The device operates at temperatures up to 150°C (TJ).
With a power dissipation of 25W (Tc), this MOSFET is suitable for various power switching applications. The input capacitance (Ciss) is 590 pF maximum at 100V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650 V.
The continuous drain current is 10A (Tc).
The maximum Rds On is 430mOhm at 5A and 10V.
The operating temperature is up to 150°C (TJ).
It is supplied in a TO-262-3 Full Pack, I²Pak package.