| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STFI12N60M2 is an N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 9A at a case temperature (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 450mOhm at 4.5A and 10V, a gate charge (Qg) of 16nC maximum at 10V, and an input capacitance (Ciss) of 538pF maximum at 100V. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA, and the maximum gate-to-source voltage (Vgs) is ±25V.
The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 25W (Tc). It is housed in a TO-262-3 Full Pack, I²Pak package, also known as I2PAKFP (TO-281), and is designed for through-hole mounting.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level (MSL) 1, and REACH unaffected status. However, this compliance data is unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600 V.
The continuous drain current is 9 A.
The maximum power dissipation is 25 W.
The operating temperature range is -55°C to 150°C.
The package type is TO-262-3 Full Pack, I²Pak.
The STFI12N60M2 is mounted using the Through Hole method.