| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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828 pcs
|
828 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STFH24N60M2 is an N-Channel MOSFET with a maximum drain-to-source voltage (Vds) of 600V and a continuous drain current (Id) of 18A (Tc). It features a low on-resistance (Rds On) of 190mOhm at 9A and 10V, and a gate threshold voltage (Vgs(th)) of 4V at 250µA.
The MOSFET operates within a temperature range of -55°C to 150°C (TJ). It utilizes MOSFET technology and comes in a TO-220FP package, suitable for through-hole mounting. The input capacitance (Ciss) is 1060 pF at 100V, and the gate charge (Qg) is 29 nC at 10V.
With a maximum power dissipation of 35W (Tc), this component is designed for power switching and amplification circuits. Its robust construction and electrical characteristics make it a reliable choice for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
18A at case temperature (Tc).
190mOhm at 9A, 10V gate drive.
TO-220-3 Full Pack (TO-220FP), through-hole mounting.
-55°C to 150°C (junction temperature).
Maximum 4V at 250µA drain current.
1060pF maximum at 100V drain-source voltage.